Filtered cathodic vacuum arc deposition of copper thin film

Copper thin films with low electrical resistivity were successfully deposit ed using a filtered cathodic vacuum are technique ar room temperature. It w as found that there is a critical film thickness of similar to 135 nm, abov e which the resistivity has an almost unchanged value of 1.8 mu Omega cm. B elow the critical thickness, the resistivity increases with decreasing thic kness and is correlated with the copper grain size measured by AFM and X-ra y diffraction.