Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

Authors
Saarinen, M Toivonen, M Xiang, N Vilokkinen, V Pessa, M
Citation
M. Saarinen et al., Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, ELECTR LETT, 36(14), 2000, pp. 1210-1211
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
14
Year of publication
2000
Pages
1210 - 1211
Database
ISI
SICI code
0013-5194(20000706)36:14<1210:RCOORV>2.0.ZU;2-K
Abstract
The authors present the first report of MBE-gown AlGalnP vertical-cavity su rface-emitting lasers. The lasers exhibit continuous wave operation ar 690 nm with a maximum output power of 0.56 mW. With a 10 mu m optical aperture the threshold current is only 1.3mA, and CW lasing is achieved up to 45 deg rees C.