Additional resistance method for extraction of separated nonlinear parasitic resistances and effective mobility in MOSFETs

Authors
Lim, GM Kim, YC Kim, DJ Park, YW Kim, DM
Citation
Gm. Lim et al., Additional resistance method for extraction of separated nonlinear parasitic resistances and effective mobility in MOSFETs, ELECTR LETT, 36(14), 2000, pp. 1233-1234
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
14
Year of publication
2000
Pages
1233 - 1234
Database
ISI
SICI code
0013-5194(20000706)36:14<1233:ARMFEO>2.0.ZU;2-9
Abstract
An additional resistance method (ARM) is proposed for the accurate and conv enient extraction of separated source (R-S) and drain (R-D) resistances. wh ich also include gate voltage (V-GS) dependence, in MOSFETs. The ARM uses a n analytical current-voltage relation in the linear operation of MOSFETs wi th two external resistors. In addition to V-GS-dependent R-S and R-D, the c hannel carrier mobility is obtained by considering parasitic resistances in MOSFETs. The ARM is verified using experimental data obtained from n- and p-MOSFETs with W/L = 30 mu m/0.7 mu m.