Direct evidence for defect conduction at interface between gallium nitrideand sapphire

Authors
Ansell, BJ Harrison, L Foxon, CT Harris, JJ Cheng, TS
Citation
Bj. Ansell et al., Direct evidence for defect conduction at interface between gallium nitrideand sapphire, ELECTR LETT, 36(14), 2000, pp. 1237-1239
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
14
Year of publication
2000
Pages
1237 - 1239
Database
ISI
SICI code
0013-5194(20000706)36:14<1237:DEFDCA>2.0.ZU;2-O
Abstract
The mobility and carrier concentration carrier depth profiles have been mea sured for a GaN epilayer grown by plasma-assisted MBE. The results show tha t the apparent carrier concentration increases at the interface whilst the apparent mobility decreases. A two-layer model can be used to explain this behaviour.