MODEL OF THE JAHN-TELLER COMPLEX FORMED IN GAAS BY A GALLIUM VACANCY AND A DONOR SUBSTITUTING FOR A GALLIUM ATOM

Authors
AVERKIEV NS GUTKIN AA ILINSKII SY RESHCHIKOV MA SEDOV VE
Citation
Ns. Averkiev et al., MODEL OF THE JAHN-TELLER COMPLEX FORMED IN GAAS BY A GALLIUM VACANCY AND A DONOR SUBSTITUTING FOR A GALLIUM ATOM, Zeitschrift für physikalische Chemie, 200, 1997, pp. 209-215
Citations number
9
Categorie Soggetti
Chemistry Physical","Physics, Atomic, Molecular & Chemical
Journal title
Zeitschrift für physikalische Chemie → ACNP
ISSN journal
09429352
Volume
200
Year of publication
1997
Part
1-2
Pages
209 - 215
Database
ISI
SICI code
0942-9352(1997)200:<209:MOTJCF>2.0.ZU;2-0
Abstract
A model has been considered of the complex formed in GaAs by a vacancy of Ga (V-Ga) and a donor substituting an adjacent Ga atom for the cas e of the complex binding a hole. The effect of the donor on the vacanc y orbitals is described by the zero-radius potential method. This effe ct was assumed to be weak compared to the interaction between the hole and the F-2-vibrations of the VGaAs4 quasimolecule. The model explain s the spatial structure of the complex which follows from the experime ntal data.