Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Citation
Jl. Jordan-sweet, Synchrotron X-ray scattering techniques for microelectronics-related materials studies, IBM J RES, 44(4), 2000, pp. 457-476
Citations number
66
Categorie Soggetti
Multidisciplinary,"Computer Science & Engineering
Journal title
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
ISSN journal
00188646 → ACNP
Volume
44
Issue
4
Year of publication
2000
Pages
457 - 476
Database
ISI
SICI code
0018-8646(200007)44:4<457:SXSTFM>2.0.ZU;2-7
Abstract
X-ray diffraction techniques using synchrotron radiation play a vital role in the understanding of structural behavior for a wide range of materials i mportant in microelectronics, The extremely high flux of X-rays produced by synchrotron storage rings makes it possible to probe layers and interfaces in complicated stacked structures, characterize low-atomic-weight material s such as polymers, and study in situ phase transformations, to name only a few applications. In this paper, following an introduction to synchrotron radiation, we describe the capabilities of the IBM/MIT X-ray beamlines at t he National Synchrotron Light Source (NSLS), Brookhaven National Laboratory (BNL), A range of techniques are introduced, and examples of their applica bility to the study of microelectronics-related materials phenomena are des cribed.