Low-temperature sensitive, compressively strained InGaAsP active (lambda=0.78-0.85 mu m) region diode lasers

This letter reports comparative studies between (Al)GaAs versus InGaAsP act ive region edge-emitting semiconductor lasers for emission wavelength in th e IR regime (lambda = 0.78-0.85 mu m). High characteristic temperature T-o( 200 K) and T-1 (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (Delta a/a = 0.6%) Al-free (InGaAsP) acti ve region with an emission wavelength of 0.85 mu m. The high T-o and T-1, a result of low active-layer carrier leakage, will be beneficial for high-te mperature and high-power operation. Implementation for InGaAsP-active VCSEL 's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed.