CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

Authors
Dainesi, P Kung, A Chabloz, M Lagos, A Fluckiger, P Ionescu, A Fazan, P Declerq, M Renaud, P Robert, P
Citation
P. Dainesi et al., CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology, IEEE PHOTON, 12(6), 2000, pp. 660-662
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
6
Year of publication
2000
Pages
660 - 662
Database
ISI
SICI code
1041-1135(200006)12:6<660:CCFIMI>2.0.ZU;2-D
Abstract
We present a fully integrated Mach-Zehnder interferometer in silicon-on-ins ulator technology. Modulation of the index of refraction is achieved throug h the plasma dispersion effect resulting in a bandwidth in the 10 MHz range . A particular and innovative design makes this device completely compatibl e with CMOS technology allowing electronic functions to be integrated on th e same substrate. Measurement results, limitations due to thermooptic effec t and absorption related to charge injection together with further improvem ents are discussed.