Single-crystal dielectric resonators for low-temperature electronics applications

Citation
J. Krupka et J. Mazierska, Single-crystal dielectric resonators for low-temperature electronics applications, IEEE MICR T, 48(7), 2000, pp. 1270-1274
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
48
Issue
7
Year of publication
2000
Part
2
Pages
1270 - 1274
Database
ISI
SICI code
0018-9480(200007)48:7<1270:SDRFLE>2.0.ZU;2-T
Abstract
Computed properties of high-Q factor sapphire, YAG, SrLaAlO4, LaAlO3, rutil e, and quartz dielectric resonators (DR's) operating on whispering-gallery TE011 and TE01 delta modes are presented in this paper. Resonators with a s uperconducting metal or partly superconducting partly metal shield are cons idered. For whispering-gallery-mode resonators, dielectric losses determine upper limit for their Q factors, while for TE011-mode resonators, their Q factors are usually limited by conductor losses. Single-crystal TE01 delta- mode resonators would have Q factors determined by both dielectric and cond uctor losses, and dominant loss mechanism depends on crystal losses and shi eld geometry. Geometric factors that allow evaluation of conductor losses o f TE011- and TE01 delta-mode resonators are given for different DR structur es.