Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP

A simulation at microscopic level of the intrinsic microwave noise temperat ure associated to GaAs and InP semiconductors under far from equilibrium co nditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigat ed, and the results show the existence of threshold fields above which elec tron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with avai lable experimental data has also been made to verify the accuracy of the mo dels used in the simulation.