Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Extended defects created in Si by ion implantation to doses below the amorp hization threshold have been studied after annealing at 800 degrees C for 1 5 min. The implant species were the group IV elements Si, Ge, and Sn, and s tructural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like {311} planar defects were observed. Additio nally, in Ge and Sn implanted samples, small {111} interstitial faulted dis location loops were observed. (C) 2000 American Institute of Physics. [S002 1-8979(00)01615-7].