Emission channeling studies of Pr in GaN

Citation
U. Wahl et al., Emission channeling studies of Pr in GaN, J APPL PHYS, 88(3), 2000, pp. 1319-1324
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
3
Year of publication
2000
Pages
1319 - 1324
Database
ISI
SICI code
0021-8979(20000801)88:3<1319:ECSOPI>2.0.ZU;2-H
Abstract
We report on the lattice location of Pr in thin film, single-crystalline he xagonal GaN using the emission channeling technique. The angular distributi on of beta(-) particles emitted by the radioactive isotope Pr-143 was monit ored by a position-sensitive electron detector following 60 keV room temper ature implantation of the precursor isotope Cs-143 at a dose of 1x10(13) cm (-2) and annealing up to 900 degrees C. Our experiments provide direct evid ence that Pr is thermally stable at substitutional Ga sites. (C) 2000 Ameri can Institute of Physics. [S0021-8979(00)03115-7].