Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire

Recent advances in the processing of complex oxide materials have allowed u s to monolithically grow ferroelectrics, of the lead lanthanum zirconate ti tanate system, on a GaN/sapphire structure. The thickness of these ferroele ctric films ranged from 0.5 to 5 mu m. Strong electrooptic effect with fiel d-induced birefringence, as large as 0.02, was measured for (Pb,La)(Zr,Ti)O -3 layer grown on a GaN/sapphire structure. The applicability of the lead l anthanum zirconate titanate material as a light modulating medium, integrat ed with GaN-based devices, was further proven by demonstrating optical modu lation of a laser beam in an Al/(Pb,La)(Zr,Ti)O-3/GaN/sapphire structure. ( C) 2000 American Institute of Physics. [S0021-8979(00)04412-1].