Planar ordering of InP quantum dots on (100)In0.48Ga0.52P

Citation
F. Hatami et al., Planar ordering of InP quantum dots on (100)In0.48Ga0.52P, J CRYST GR, 216(1-4), 2000, pp. 26-32
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
216
Issue
1-4
Year of publication
2000
Pages
26 - 32
Database
ISI
SICI code
0022-0248(200007)216:1-4<26:POOIQD>2.0.ZU;2-D
Abstract
Planar ordering of dense self-organized arrays of InP/In0.48Ga0.52P quantum dots is investigated using grazing incidence small-angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and transmission electron microsco py (TEM). Using the two-dimensional Fourier transform of the AFM data toget her with the GISAXS data, we show that the degree of ordering increases wit h increasing InP deposition time and, therefore, with increasing quantum do t density. This increase in ordering is seen both in that the dot period is less variable and in the appearance of longer ranged ordering of the dots on the surface. Intense photoluminescence due to radiative recombination of heavy holes and electrons in the quantum dots is observed at an energy bet ween the band gaps of InP and In0.48Ga0.52P. (C) 2000 Elsevier Science B.V. All rights reserved.