Growth optimization of InGaP layers by solid source molecular beam epitaxyfor the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures

InGaP/GaAs layers were grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell. The photoluminescence (PL) peak energy of the InGaP epilayers increased with the increase of the V/III flux ratio and decrease of the substrate temperature. High-quality InGaP epilayers with a PL FWHM of 6.5 meV were obtained by using the optimized growth conditions. The InGaP layers were incorporated in the InGaP/In0.20Ga0.80As/GaAs pseudo morphic high electron mobility transistor structures. This structure showed low two-dimensional electron gas mobility, which was found to be attribute d to the InGaP/InGaAs interface. Despite the low mobility for the InGaP/In0 .20Ga0.80As/GaAs HEMT structures, very promising device results have been a chieved. (C) 2000 Elsevier Science B.V. All rights reserved.