Cl. Berrie et Sr. Leone, Observation of monolayer and bilayer period RHEED oscillations during epitaxial growth of Ge on Ge(100), J CRYST GR, 216(1-4), 2000, pp. 159-170
Both monolayer and bilayer periods are observed during the growth of german
ium on Ge(1 0 0) using reflection high-energy electron diffraction (RHEED).
Oscillations in the specular beam intensity of the RHEED pattern are recor
ded for substrate temperatures of 400-850 K over a wide range of incident g
ermanium fluxes. With careful sample preparation, the period of the RHEED o
scillations consistently goes through a transition from a bilayer period to
an alternating intensity monolayer period as the surface temperature is ra
ised above similar to 700 K. Without this preparation, only bilayer periods
characterized by symmetric-shaped oscillations are observed. This indicate
s that the sample preparation plays a key role in determining the resulting
growth. The period of the RHEED oscillations is not strongly dependent on
the incident angle of the electron beam, suggesting that the observed perio
ds are not a result of a diffraction condition, such as Kikuchi lines. The
data are consistent with a mobility-controlled dynamic bilayer versus monol
ayer growth mechanism. (C) 2000 Elsevier Science B.V. All rights reserved.