Diamond growth on polycrystalline nickel silicides

Nickel silicides such as NiSi2 and Ni3Si display adequate structural and ch emical properties for the heteroepitaxial HFCVD growth of diamond on it. Th erefore, polycrystalline NiSi2 and Ni3Si were synthesized and their behavio r for diamond growth were compared with polycrystalline references of Ni an d Si samples. The quality of diamond particles grown on NiSi2 and Ni3Si as well as Si substrates is fairly increased in comparison with the quality of diamond grown on Ni substrates. This is interpreted from XPS and AES surfa ce characterizations. by the depletion on Ni, Si of the graphitic layer obs erved on nickel which competes with diamond growth. Both on Si-rich NiSi2 s ilicide and silicon, a carbide is found as a precursor phase to diamond. (C ) 2000 Elsevier Science B.V. All rights reserved.