Growth of lowly Nd doped GdVO4 single crystal and its laser properties

Citation
Hj. Zhang et al., Growth of lowly Nd doped GdVO4 single crystal and its laser properties, J CRYST GR, 216(1-4), 2000, pp. 367-371
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
216
Issue
1-4
Year of publication
2000
Pages
367 - 371
Database
ISI
SICI code
0022-0248(200007)216:1-4<367:GOLNDG>2.0.ZU;2-S
Abstract
In this paper, low concentration Nd-doped GdVO4 was successfully grown by t he Czochralski method. The laser output up to 14.25 W at 1.06 mu m was obta ined with a 3 mm x 3 mm x 4 mm Nd:GdVO4 crystal sample when it was pumped b y a cw fiber-coupled laser diode (LD). The doubling green laser output powe r up to 3.3 W at 0.53 mu m was also achieved with a 3 mm x 3 mm x 4 mm Nd:G dVO4 crystal sample and a 3 mm x 3 mm x 11mm KTiOPO4 (KTP) crystal sample w hen pumped by the same LD. Some properties of the Nd:GdVO4 crystal are comp ared with that of the Nd:YVO4 crystal. (C) 2000 Elsevier Science B.V. All r ights reserved.