InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic inte gration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure, Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedanc e gains of 170 Ohm/380 Ohm and optical/electrical bandwidths of 50 GHz/34 G Hz, To the best of our knowledge, this is the highest bandwidth of any hete rojunction bipolar transitor (HBT)-based photoreceiver optoelectronic integ rated circuit (OEIC) published to date, We even predict a bandwidth of 60 G Hz for the same circuit topology by a simple reduction of the photodiode di ameter and an adjustment of the feedback resistor value.