Real-time observation of local molten-phase nucleation on a semiconductor surface under powerful light irradiation

The first results of a dynamics investigation of the effect of anisotropic local melting of semiconductors observed under irradiation by powerful ligh t pulses are presented. In situ time dependences of the sizes and density ( quantity per cm(-2)) of local molten regions are interpreted in the framewo rk of the following model: the existence of a short-lived metastable state, characterized by superheating in the solid phase. The experiments and theo retical calculations crucial to clarifying the mechanism of the effect in q uestion are discussed.