Preparation and characterization of SiO2-MxOy (M = V, Sn, Sb) thin films from silicic acid and metal chlorides

The preparation of SiO2-MxOy (M = V, Sn, Sb) binary oxide thin films by sol -gel method was investigated. The reaction of silicic acid with metal chlor ide (M = Sn and Sb) or oxychloride (M = V) formed homogeneous solutions. Th e dip-coating of slide glass and silicon wafer followed by heat treatment g ave oxide films having Si-O-M bond. The changes of FT-IR spectra as a funct ion of heat treatment temperature and molar composition confirmed the Si-O- M bonds. The sheet resistance of films increased with an increase on heat t reatment temperature and decrease in the content of metal oxide MxOy. X-ray diffraction peaks were observed for the SiO2-V2O5 films with high V2O5 con tents and heat-treated above 250 degrees C, while the others were amorphous . Oxide films heat treated at 500 degrees C had a thickness between 340-470 nm.