PHASE-FORMATION IN CDTE-IN FILMS

Polycrystalline CdTe:In films were grown by the closed spaced vapor tr ansport combined with free evaporation technique (CSVT-FE). The In con centration in the samples grew in accord with the increase of the In s ource temperature. As the In concentration increased, the Cd concentra tion decreased. The tellurium concentration was nearly constant at 50 at.%. This is indicative that the In is entering substitutionally for Cd, forming a solid solution of the type CdxIn1-xTe. X-ray diffraction patterns shown that the films had a crystalline structure that depend ed on the In concentration on the sample. There were no peaks related with metallic indium. The films were cubic single phase up to an In co ncentration of 22 at.%, and shown a linear decrease in the lattice par ameter as the In concentration grew. For In concentration between 28 a t.% and 42 at.% there were a phase mixture of the cubic phase and the compound CdIn2Te4.