Kinetic analysis of the chemical processes in the decomposition of gaseousdielectrics by a non-equilibrium plasma - Part 1: CF4 and CF4/O-2.

Numerical integration of the coupled differential equations which describe a chemical reacting system and sensitivity analysis are becoming increasing ly important tools in chemical kinetics. In this work, a numerical modellin g analysis of the chemical processes in the gas-phase decomposition of pure CF4 and CF4/O-2 mixtures, in the presence of silicon, was performed. The r elative importance of individual processes was analysed and the sensitivity coefficients as well as the effect of the parameters uncertainties were de termined. The results were compared with experimental data from the literat ure to adjust the model parameters. The main etching agent in the system is the fluorine atom The concentrations of the main species (SiF4, CO, CO2 an d COF2) depend on the composition of the mixture.