Intermittent electroless nickel deposition in a fine trench flip chip bumppad

Authors
Citation
Kl. Lin et Cl. Chen, Intermittent electroless nickel deposition in a fine trench flip chip bumppad, J ELCHEM SO, 147(7), 2000, pp. 2604-2606
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
147
Issue
7
Year of publication
2000
Pages
2604 - 2606
Database
ISI
SICI code
0013-4651(200007)147:7<2604:IENDIA>2.0.ZU;2-I
Abstract
An intermittent electroless nickel deposition process was examined which in volved periodically removing and reinserting the silicon wafer in the depos ition bath. this process results in electroless nickel deposits with a smoo th surface appearance and uniform thickness within the bump opening. The in termittent deposition process also results in enhancement in deposition spe ed. The benefits of this process are ascribed to replenishment of the surfa ce concentration and the breakdown of entrapped gas bubble in the trench ar ea of bump pad. (C) 2000 The Electrochemical Society.