D. Bullen et al., In situ technique for dynamic fluid film pressure measurement during chemical mechanical polishing, J ELCHEM SO, 147(7), 2000, pp. 2741-2743
A device has been designed to measure the pressure of the wafer-pad interfa
cial film during chemical mechanical polishing. Measurements have been coll
ected and compared from trials where the wafer was held stationary and wher
e it was rotated. Stationary trials resulted in an asymmetrical pressure di
stribution, a large pressure range, and some subatmospheric values. Dynamic
trials showed less variability, no subatmospheric values, and pressure inc
reasing monotonically from edge to center. Flow separation was observed und
er wafers with a concave shape and resulted in erratic pressure fluctuation
s. (C) 2000 The Electrochemical Society. S0013-3651(99)11-029-2. An rights
reserved.