Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals

An electrochemical etching process is used for evaluating the types and the distribution of crystal defects on both the Si and C faces of p-type 6H an d 4H-SiC. The surface morphology of the etched area is different For the tw o surface polarities. Dislocation-related etch-pits appeared on the etched surfaces due to a preferential etching process. The etching experiments wer e conducted in a commercial apparatus in combination with accurate capacita nce-voltage profiling, showing that this characterization method is highly useful and simple for evaluating SIC material quality. (C) 2000 The Electro chemical Society. S0013-3651(99)12-022-6. All rights reserved.