Photoresist removal using low molecular weight alcohols

A novel method to remove photoresist using low molecular weight alcohols (e .g., isopropanol) is described. This process produces a dry surface in a si ngle step; no additional rinsing or drying is required. Results of atomic f orce microscopy (AFM) analysis show no appreciable change in microroughness of aluminum, silicon, or silicon dioxide surfaces upon alcohol treatment. X-ray photoelectron spectroscopy (XPS) of post isopropanol-treated surfaces indicates that organic contamination levels as measured by XPS are similar to those resulting from RCA cleans. Low dose ion implanted (2E12 B or P at oms/cm(2)) photoresist can be removed at room temperature (27 degrees C). P ressures in the range of 60 to 100 psi and temperatures between 50 and 100 degrees C are required to remove photoresist implanted with 2 x 10(15) B or F atoms/cm(2). The likely photoresist removal mechanism appears to he diss olution of the polymer matrix by the alcohols. Contact angle measurements s uggest that the photoresist has been removed, although a residual adhesive layer applied prior to photoresist spin coating may remain on the surface. (C) 2000 The Electrochemical Society. S0013-4651(99)11-044-9. All rights re served.