Formation of Ni silicides on (001)Si with a thin interposing Pt layer

Authors
Cheng, LW Cheng, SL Chen, LJ Chien, HC Lee, HL Pan, FM
Citation
Lw. Cheng et al., Formation of Ni silicides on (001)Si with a thin interposing Pt layer, J VAC SCI A, 18(4), 2000, pp. 1176-1179
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
4
Year of publication
2000
Part
1
Pages
1176 - 1179
Database
ISI
SICI code
0734-2101(200007/08)18:4<1176:FONSO(>2.0.ZU;2-2
Abstract
The formation of Ni silicides on (001)Si with a thin interposing Pt layer h as been investigated. NiSi was observed to be the only silicide phase for t he samples annealed at 500-800 degrees C with a thin interposing Pt layer. The sheet resistance maintained the same low level in a wide temperature ra nge. Pt addition was found to retard significantly the formation of nickel silicides and enhance the thermal stability of NiSi thin films on (001)Si. For Ni(30 nm)/Pt(1.5 nm)/(001)Si, the process window of NiSi was extended t o 500-800 degrees C. The effects of a thin interposing Pt layer on the form ation of Ni silicides on (001)Si are discussed. (C) 2000 American Vacuum So ciety. [S0734-2101(00)18004-2].