Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology-scattering with angular limitation in projection electron beam lithography membrane

Authors
Han, SI Mangat, PJS Smith, SM Dauksher, WJ Convey, D Gregory, RB
Citation
Si. Han et al., Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology-scattering with angular limitation in projection electron beam lithography membrane, J VAC SCI A, 18(4), 2000, pp. 1225-1229
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
4
Year of publication
2000
Part
1
Pages
1225 - 1229
Database
ISI
SICI code
0734-2101(200007/08)18:4<1225:COPECV>2.0.ZU;2-D
Abstract
In scattering with angular limitation in projection electron beam lithograp hy (SCALPEL) mask technology, the choice of membrane material is an importa nt issue from the perspective of mask performance and manufacturing. Low-pr essure chemical vapor deposition SiN has been widely employed for SCALPEL m embranes because of its excellent manufacturability and other material prop erties. However, amorphous plasma enhanced chemical. vapor deposition SiC:H has a good potential for the membrane material, and we have developed an o ptimized process to deposit the SIC films for mask fabrication. (C) 2000 Am erican Vacuum Society. [S0734-2101(00)17204-5].