We fabricated bismuth (Bi) nanowires with low energy electron beam lithogra
phy using silver (Ag) nanocrystal shadowmasks and a subsequent chlorine rea
ctive ion etching. Submicron-size metal contacts on the single Bi nanowire
were successfully prepared by in situ focused ion beam metal deposition for
transport measurements. The temperature dependent resistance measurements
on the 50 nm wide Bi nanowires showed that the resistance increased with de
creasing temperature, which is characteristic of semiconductors and insulat
ors. (C) 2000 American Vacuum Society.[S0734-2101(00)03704-0].