Fabrication of a nanosize metal aperture for a near field scanning opticalmicroscopy sensor using photoresist removal and sputtering techniques

Citation
My. Jung et al., Fabrication of a nanosize metal aperture for a near field scanning opticalmicroscopy sensor using photoresist removal and sputtering techniques, J VAC SCI A, 18(4), 2000, pp. 1333-1337
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
4
Year of publication
2000
Part
1
Pages
1333 - 1337
Database
ISI
SICI code
0734-2101(200007/08)18:4<1333:FOANMA>2.0.ZU;2-C
Abstract
Micromachining of a nanoscale Si3N4 tip for near field scanning optical mic roscopy (NSOM) and scanning force microscopy (SFM) has been described. The tapered optical metal-coated fiber is generally used to provide a subwavele ngth sized aperture on the tip. Several micromachining methods have been pe rformed in order to have a metal aperture with a radius less than lambda/2. Apertures provided with less than lambda/2 and hollow tips would provide a suitable probe for both NSOM and SFM. A Si3N4 tip coated with a thin metal film will meet these requirements. The Si tip has been initially fabricate d using reactive ion etching. The SiO2 etch masks with 10 and 2 mu m were p atterned followed by Si etching. The etched Si post was at least 3 mu m tal l and the radii of the tips were found to be 30 and 10 nm depending on the fabrication methods. A Si3N4 thin film was deposited on the fabricated Si t ip using a low pressure chemical vapor deposition technique in order to pro vide a capability for an atomic force microscope. A 30 or 60 nm Cr metal fi lm was deposited using an electron beam evaporator. The thick photoresist ( PR) film was coated using a two-stage method in order to cover the tall Si tip. The PR film was carefully etched to have a metal aperture size with le ss than lambda/2. The removal of the Cr metal at the top of the Si tip has been performed using a Ne sputtering technique. The radius of the sputtered tip has been observed to be similar to 80 nm after 2 h sputter etching. (C ) 2000 American Vacuum Society. [S0734-2101(00)17804-2].