Estimation of surface kinetic parameters and two-dimensional simulation ofInP pattern features during CH4-H-2 plasma etching

A two-dimensional simulation of reactive ion etching (RTE) of InP trench pr ofiles is developed. The local equation of etching rate on each string is e stablished considering the Langmuir adsorption concept. The etching rate ta kes into account the chemical etching on both the covered and uncovered sur face fractions by the neutrals and the ion sputtering on both the covered a nd uncovered fraction of surface elements. Surface kinetic parameters of In P RIE process are estimated by using a minimization method to fit the exper imental data of etching rate as a function of percent CH4 in the CH4-H-2 pl asma mixture. Such parameters are then used to simulate the etch surface pr ofile evolution in time under the RIE process. The effect of ratio of the i on flux to the neutral flux on the anisotropy of the profiles is shown as w ell as the aspect ratio on the etching rate evolution in time. (C) 2000 Ame rican Vacuum Society. [S0734-2101 (00)09604-4].