Elevated temperature scanning tunneling microscopy is used to study oxides
that are room temperature insulators but become sufficiently electrically c
onducting at higher temperatures to allow imaging to be performed. Atomic r
esolution images of NiO, CoO, and UO2 have been obtained in this fashion wh
ich allow surface structure and defect determination. To complement the exp
eriments, modeling of the electronic surface structure reveals which atomic
sites give rise to the contrast observed in the images. Low voltage scanni
ng electron microscopy is used to image small equilibrium pores in UO2 sing
le crystals to evaluate the surface energy ratio of the (111) to (001) surf
aces.