Transmission electron diffraction at 200 eV and damage thresholds below the carbon K edge

Citation
Mr. Stevens et al., Transmission electron diffraction at 200 eV and damage thresholds below the carbon K edge, MICROS MICR, 6(4), 2000, pp. 368-379
Citations number
45
Categorie Soggetti
Multidisciplinary,"Spectroscopy /Instrumentation/Analytical Sciences
Journal title
MICROSCOPY AND MICROANALYSIS
ISSN journal
14319276 → ACNP
Volume
6
Issue
4
Year of publication
2000
Pages
368 - 379
Database
ISI
SICI code
1431-9276(200007/08)6:4<368:TEDA2E>2.0.ZU;2-O
Abstract
Transmission electron diffraction patterns from ultra-thin aromatic and ali phatic organic films at beam energies of 200 eV-1 keV have been recorded in a custom low energy electron transmission (LEET) chamber. A significant re duction of the molecular damage cross-section, measured by fading of diffra ction spots, was found for thin films of the aromatic perylene when the bea m energy was reduced from 400 to 200 eV. The corresponding measurements for the aliphatic tetracontane showed a smaller "threshold energy" and the dif ferences are discussed. Electron beam damage from other aromatic materials has also been studied at low energy. Comparison of the carbon K shell ioniz ation cross-section and the measured damage cross-sections show that carbon K-shell ionization is strongly correlated with the damage observed in arom atics at beam energies higher than 284 eV. Calculation of the minimum numbe r of unit cells needed for imaging a single molecule, and comparison of cal culated elastic with measured damage cross-sections both indicate new possi bilities for imaging biomolecules with low energy electrons.