Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer

Authors
Yu, MJ Chan, YJ Laih, LH Hong, JW
Citation
Mj. Yu et al., Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer, MICROW OPT, 26(4), 2000, pp. 232-234
Citations number
5
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
26
Issue
4
Year of publication
2000
Pages
232 - 234
Database
ISI
SICI code
0895-2477(20000820)26:4<232:IMPOSI>2.0.ZU;2-T
Abstract
Spiral inductors have been evaluated on Si substrates by inserting a porous Si layer for the application of MMICs. This high-resistive porous Si layer provides a low substrate loss and a low coupling effect. Spiral inductors fabricated on this layer achieve better Q- and inductance values. A 9.7 nH inductance can be obtained with a Q-value of 3.6 for a 4.5-turn inductor. ( C) 2000 John Wiley & Sons, Inc.