High-power transistor boosts aircraft radar

Authors
Citation
D. Keller, High-power transistor boosts aircraft radar, MICROWAV RF, 39(7), 2000, pp. 114-114
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVES & RF
ISSN journal
07452993 → ACNP
Volume
39
Issue
7
Year of publication
2000
Pages
114 - 114
Database
ISI
SICI code
0745-2993(200007)39:7<114:HTBAR>2.0.ZU;2-2
Abstract
AIRBORNE-EQUIPMENT manufacturers must develop systems capable of producing ever-higher power levels to increase the range and performance of aircraft radar systems. This creates a demand for devices that can generate high-pow er RF signals. Responding to this demand, GHz Technology, Inc. (Santa Clara , CA) produces a line of bipolar lar power transistors-the distance-measure ment-equipment (DME) line-specifically designed to meet next-generation avi onics requirements by generating high power levels at frequencies from 1.02 5 to 1.150 GHz. The company recently completed this five-member DME family with the introduction of its most powerful member, the model DME 700.