Electrical properties of contacts on P-type Cd0.8Zn0.2Te crystal surfaces

In this payer effects of surface treatments of p-type Cd0.8Zn0.2Te devices were studied by Atomic Force Microscopy (AFM), I-V measurements, and electr ical properties as well as different contact technologies using Au, Al: In and electroless Au. It is shown that electroless Au film deposited by the c hemical method can form a heavily doped pf layer on a smooth surface, which is nearly ohmic on p-type material. Electroless Au gives better contact th an evaporated Au, Al or In. A post-annealing treatment of electroless Au fi lm improves the ohmic quality of contacts and enhances the adhesion between contact layer and the Cd0.8Zn0.2Te crystal surface. (C) 2000 Elsevier Scie nce B.V. All rights reserved.