Generation of X-rays by 850 MeV electrons in a novel periodic multicrystalstructure on a GaAs plate surface

Citation
Vv. Kaplin et al., Generation of X-rays by 850 MeV electrons in a novel periodic multicrystalstructure on a GaAs plate surface, NUCL INST A, 448(1-2), 2000, pp. 66-69
Citations number
4
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
448
Issue
1-2
Year of publication
2000
Pages
66 - 69
Database
ISI
SICI code
0168-9002(20000621)448:1-2<66:GOXB8M>2.0.ZU;2-7
Abstract
A novel type of a periodical crystalline target for the generation of coher ent X-rays by relativistic electrons is described. The target has been done on the surface of a GaAs crystal plate by means of microlitography. The et ched microstructure is a system of about 300 stripes 14 mu m thick, 100 mu m high and the gaps between the stripes are 29 mu m. The measured spectra a nd orientational dependences of the X-rays emitted at an angle of 19 degree s to the 850 MeV electron beam of the Tomsk synchrotron are discussed. The generated 63 keV radiation consists of parametric X-ray radiation (PXR) and diffracted X-ray transition radiation (DTR). It has been shown that the in tensity of the DTR component of the generated X-rays is much more great tha n that of the PXR. (C) 2000 Elsevier Science B.V. All rights reserved.