Diffraction method for structure investigations of semiconductor heterosystems using synchrotron variable wavelength

The synchrotron investigation method is presented for structure research of semiconductor heterosystems with homogeneous layers and superlattices usin g the variable wavelength of a synchrotron radiation beam passing at the im mobile sample. The used experimental procedure is potentially suitable for in situ X-ray diffractometry during the growth of epitaxial layers. For the proposed procedure, the equations are derived for the first time to measur e tetragonal crystal lattice distortions and superlattice period distributi on. The experimental results have been obtained for heterosystems with laye rs of AlxGa1-xAs grown by molecular-beam epitaxy (MBE) onto GaAs substrates . (C) 2000 Elsevier Science B.V. All rights reserved.