The structure study of thin semiconductor and dielectric layers by synchrotron radiation diffraction

Authors
Yurjev, GS Nazmov, VP Kondratjev, VI Sheromov, MA Korchagin, MA
Citation
Gs. Yurjev et al., The structure study of thin semiconductor and dielectric layers by synchrotron radiation diffraction, NUCL INST A, 448(1-2), 2000, pp. 286-289
Citations number
2
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
448
Issue
1-2
Year of publication
2000
Pages
286 - 289
Database
ISI
SICI code
0168-9002(20000621)448:1-2<286:TSSOTS>2.0.ZU;2-V
Abstract
The structure of novel materials was studied using diffraction patterns obt ained at the "Anomalous scattering" station. The substances to be examined are thin (100-9000 A) single-crystals, polycrystals and amorphous thin laye rs on various kinds of substrates that are supported by diffraction. Disori entation of blocks in highly ordered layers was estimated using the length of are reflections in two-dimensional diffraction patterns recorded by Imag e Plate. A difference in parameters of crystal lattices of layers and bulk samples is shown. (C) 2000 Elsevier Science B.V. All rights reserved.