Local structure in Ge-Si solid-state solutions by combined Ge and Si EXAFS

Authors
Babanov, YA Deev, AN Ruts, YV
Citation
Ya. Babanov et al., Local structure in Ge-Si solid-state solutions by combined Ge and Si EXAFS, NUCL INST A, 448(1-2), 2000, pp. 368-371
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
448
Issue
1-2
Year of publication
2000
Pages
368 - 371
Database
ISI
SICI code
0168-9002(20000621)448:1-2<368:LSIGSS>2.0.ZU;2-3
Abstract
A new method of studying local structure in disordered binary systems by co mbined EXAFS is proposed. This consists of determining partial interatomic distances by solution of the system of integral equations describing two EX AFS spectra. This information is used as input data for the determination o f partial coordination numbers. The problem in this case is reduced to the solution of the well-conditioned system of linear algebraic equations. We a pply this method to obtain local structure information in Ge-Si solid-state solutions. (C) 2000 Elsevier Science B.V. All rights reserved.