Optical end of line metrology (OELM) is a new method to measure relative li
ne shortening effects using conventional optical overlay instruments. In th
is technique, a frame that has two adjacent sides that are constructed of l
ines and spaces is imaged onto a wafer. Since gratings below 0.5 mu m canno
t be resolved using conventional optics, the alignment tool sees the sides
composed of lines and spaces as solid edges. The purpose of this paper is t
o characterize the errors implicit with this approach. OELM results are com
pared with scanning electron microscopy (SEM) line shortening measurements,
which showed that optical measurements exaggerated the physical effect. A
simple aerial image analogy predicts that optical line shortening measureme
nts are pitch and duty cycle dependent. OELM measurements require calibrati
on as a function of pitch and line width. (C) 2000 Society of Photo-Optical
Instrumentation Engineers. [S0091-3286(00)02707-0].