The magnetic anisotropy and the lattice relaxation of epitaxial Fe films gr
own on InAs(100)-4 X 2 at room temperature have been studied using in situ
magneto-optical Kerr effect and reflection high-energy electron diffraction
. The experimental results demonstrate that the symmetry breaking associate
d with the intrinsic atomic scale structure of the reconstructed semiconduc
tor surface induces an in-plane anisotropic lattice relaxation and an in-pl
ane uniaxial magnetic anisotropy in the ultrathin region. We propose that t
his is a general phenomenon in ferromagnetic/semiconductor heterostructures
.