Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4x2

Citation
Yb. Xu et al., Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4x2, PHYS REV B, 62(2), 2000, pp. 1167-1170
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
2
Year of publication
2000
Pages
1167 - 1170
Database
ISI
SICI code
0163-1829(20000701)62:2<1167:ALRAUM>2.0.ZU;2-X
Abstract
The magnetic anisotropy and the lattice relaxation of epitaxial Fe films gr own on InAs(100)-4 X 2 at room temperature have been studied using in situ magneto-optical Kerr effect and reflection high-energy electron diffraction . The experimental results demonstrate that the symmetry breaking associate d with the intrinsic atomic scale structure of the reconstructed semiconduc tor surface induces an in-plane anisotropic lattice relaxation and an in-pl ane uniaxial magnetic anisotropy in the ultrathin region. We propose that t his is a general phenomenon in ferromagnetic/semiconductor heterostructures .