Electrical conduction and oxygen sensing mechanism of Mg-doped SrTiO3 thick film sensors

The dependencies of the electrical conduction of Mg-doped SrTiO3 thick film samples on temperature and oxygen partial pressure have been studied. The Mg contents in SrTiO3 were 10 mol%, 20 mol%, 30 mol%, 40 mol% and 50 mol%, respectively. The experimental results show that all samples exhibit p-type semiconduction in the p(o2) region 3.8 x 10(-4)-2.6 x 10(-1) atm and tempe rature range 500-900 degrees C. The temperature at which a maximal resistan ce is observed decreases from 300 degrees C to 100 degrees C in Mg-doped Sr TiO3 samples. The 40 mol% Mg-doped SrTiO3 sample reveals the best oxygen se nsing properties. Results are discussed based on the X-ray diffraction and the analysis of defect chemistry. (C) 2000 Elsevier Science S.A. All rights reserved.