Effects of CdO dopant on the gas sensitivity properties of ZnFe2O4 semiconductors

Authors
Chu, XF Liu, XQ Meng, GY
Citation
Xf. Chu et al., Effects of CdO dopant on the gas sensitivity properties of ZnFe2O4 semiconductors, SENS ACTU-B, 65(1-3), 2000, pp. 64-67
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
65
Issue
1-3
Year of publication
2000
Pages
64 - 67
Database
ISI
SICI code
0925-4005(20000630)65:1-3<64:EOCDOT>2.0.ZU;2-Y
Abstract
This paper reports the preparation and gas sensitivity properties of Zn1-xC dxFe2O4 to C2H2OH. Raw powders of Zn1-xCdxFe2O4 were obtained by a chemical co-precipitation and solid-state reaction method. The effects of the calci ning temperature on the phase constituents are characterized by X-ray diffr action (XRD). We investigated the influence of CdO on the conductance-tempe rature correlation, and gas sensing properties of ZnFe2O4. The results demo nstrated that CdO could improve the sensitivity, selectivity and response t ime of ZnFe2O4. (C) 2000 Elsevier Science S.A. All rights reserved.