Porous silicon (PS) layers with 60% porosity and 80 mu m thick were prepare
d from n-type silicon wafer. We present the sensitivity of PS photoluminesc
ence to 250 ppm of carbon monoxide. Besides the variation of conductivity o
f the device due to presence of organic vapors such as chloroform, methanol
, ethanol and toluene have been carried out. (C) 2000 Elsevier Science S.A.
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