Wy. Chung et al., Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties, SENS ACTU-B, 65(1-3), 2000, pp. 312-315
Thin films of indium oxide were prepared on alumina and silicon substrates
by spin-coating from an aqueous acetic acid solution dissolving In(OH)(3) a
nd ammonium carboxymethyl cellulose. The films could cover well the large g
rains of rough alumina as well as the flat surface of silicon. By changing
the number of spin-coating, the film thickness was well controlled between
70nm and 210nm on alumina or between 65 nm and 220 nm on silicon, as observ
ed by cross-sectional FE-SEM. Gas sensing properties including sensitivity,
selectivity and the rates of response and recovery were strongly dependent
on the kind of substrate, film thickness and operating temperature. (C) 20
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