Excitation energy migration in highly emissive semiconducting polymers

Citation
Ejw. List et al., Excitation energy migration in highly emissive semiconducting polymers, CHEM P LETT, 325(1-3), 2000, pp. 132-138
Citations number
28
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
325
Issue
1-3
Year of publication
2000
Pages
132 - 138
Database
ISI
SICI code
0009-2614(20000721)325:1-3<132:EEMIHE>2.0.ZU;2-9
Abstract
The process of excitation energy migration (EEM) in conjugated polymers, wh ich is relevant both for light emitting diodes and laser applications, is p robed by doping the blue light emitting methyl-substituted ladder-type poly (para-phenylene) with small concentrations of a highly fluorescent pi-conju gated macromolecule. The experimentally attained temperature and concentrat ion dependence of the steady state photoluminescence is modeled and discuss ed by means of a two-step EEM process: (1) a thermally activated migration within the host and (2) transfer from the host to the guest. In particular we show that a Forster-type mechanism alone cannot account for the experime ntal facts in such a guest host system. (C) 2000 Published by Elsevier Scie nce B.V.