Three-dimensional Monte Carlo Simulations of electromigration in polycrystalline thin films

The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of ato m diffusion particularly suited to deal with polycrystalline three-dimensio nal films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The l ocal current density is calculated using an equivalent resistor network. Th e results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initi al stage of void formation with an atomistic model. (C) 2000 Elsevier Scien ce B.V. All rights reserved.