Computation results of the model of solid state amorphization (SSA) based o
n a general approach to non-equilibrium phase transitions are reported. The
model takes into account the mutual interaction of the structural elements
of the amorphous phase via a deformation field. For the experimental param
eters, corresponding to semiconductors undergoing amorphization by high-pre
ssure treatment, a family of self-sustaining autowave solutions in the form
of a traveling front, a traveling pulse and a series of pulses associated
with the traveling front was obtained. The relation of these solutions with
the expected morphology of amorphous samples produced by SSA is discussed.
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